18.97.9.173
18.97.9.173
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SCIE SCOPUS
Biased D . C . Double Arc Plasma 화학증착에 의한 다이아몬드 합성에 관한 연구
A Study on the Synthesis of diamond by Biased D . C . Double Arc Plasma CVD
오세성(Se Sung Oh), 고인용(In Yong Ko)
UCI I410-ECN-0102-2008-580-001848127

We developed the Biased Double D. C. Arc Plasma apparatus and synthesized diamond thin films on silicon wafer using it. We named this process Biased Double Arc Plasma CVD process (B. D. A. Plasma CVD). It was possible to obtain a high growth rate of diamond films because of the effective decomposition of reactant by applying bias voltage between plasma and substrate and also, the degree of freedom of the selection of reaction conditions to get a good diamond films was broadened compare with the HFCVD on MWCVD process.

[자료제공 : 네이버학술정보]
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