Hg_(0.7)Cd_(0.3)Te epilayers were grown by a silder-type LPE(liquid phase epitaxy) technique using Te-rich growth solution. CdTe substrates of (111)Cd orientation with various degrees of misorientation were prepared by vertical Bridgman crystal growth and subsequent chemo-mechanical polishing processes. Epi-layers, which were grown using a substrate with 1^0 misoriented toward four different directions, showed a typical terrace morphology with terrace fronts perpendicular to the misorientation directions. As the misoriented angle increases, the terrace width decreases, while the terrace height increases. With the misorientation larger than 2^0, the terrace structure begins to disappear transforming into a wave-like surface. The initial stage of the epi-layer growth is thought to be governed by the so-called step bunching process. Dislocations begin to play a major role in the growth process when the terrace becomes as wide as 10 to 30㎛. Epi-layers were examined by Nomarski differential interference contrast optical microscope and stylus