CdTe single crystals were grown by a vertical Bridgman method. The growth rate was varied between 1.1 and 5.4 ㎜/hr with maintaining the temperature gradient of 16℃/㎝ at the solid-liquid interface. Etch-pit structures of CdTe single crystals were investigated. The dislocation density was larger and the subgrain size was smaller at the surface and bottom of the crystal. With the increasing growth rate, the dislocation density gets larger and the subgrain size becomes smaller The thermal stress, which is supposed to build up during the solidification process, can explain our results.