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3.144.109.147
3.144.109.147
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SCIE SCOPUS
수직 Bridgman 법에 의한 CdTe 단결정 성장시 성장속도가 전위 밀도와 분포에 미치는 영향
Effect of the Growth Rate on the Dislocation Density and Distribution of CdTe Single Crystals Grown by a Vertical Bridgman Method
송원준(W . J . Song), 서상희(S . H . Suh), 임성욱(S . W . Lim), 최인훈(I . H . Choi), 김재묵(J . M . Kim)
UCI I410-ECN-0102-2008-580-001851404

CdTe single crystals were grown by a vertical Bridgman method. The growth rate was varied between 1.1 and 5.4 ㎜/hr with maintaining the temperature gradient of 16℃/㎝ at the solid-liquid interface. Etch-pit structures of CdTe single crystals were investigated. The dislocation density was larger and the subgrain size was smaller at the surface and bottom of the crystal. With the increasing growth rate, the dislocation density gets larger and the subgrain size becomes smaller The thermal stress, which is supposed to build up during the solidification process, can explain our results.

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