Electrical resistivity and Hall coefficient of Co-early transition metal (ETM; Zr, Nb and Mo) thin film alloys were studied. Electrical resistivity was linearly increased with increasing solute concentration in spite of the structural difference. The increasing rate of electrical resistivity per 1 at % of solute was about 15,10 and 5μΩ㎝ for Nb, Zr and Mo, respectively. Electrical resistivity slightly decreased with increase of the input power and sputtering time and rapidly increased with increase of Ar pressure. From the relation between electrical resistivity and Hall coefficient, it was considered that the Hall effect in Co-Zr amorphous thin film was controlled by side-jump mechanism.