WC-6% Co 초경합금의 현미경 조직에 미치는 SiC 첨가의 영향을 조사하기 위하여, WC SiC 분말을 혼합하는 과정에서 취한 각종 처리조건에 따른 분말의 특징을 X선분말회절 시험으로 미리 검토한 다음, WC-SiC-6% Co 초경합금의 현미경조직을 관찰하였다. 1700℃로 진공가열처리한 WC-SiC 혼합분말은 (001)^(***)면의 이방성 성장이 현저하였고, 이 분말을 첨가하여 소결한 WC-SiC-6% Co 초경합금에서는 WC의 (001)면에 평행한 방향으로한 이방성 결정성장이 일어난 탄화물이 석출되여 있음을 볼 수 있었다. SiC의 첨가량을 증가시키거나 소결온도를 상승시키면 α₂와 Co상의 결정이 촉진되었다.

Effects of SiC addition to the cemented WC-6% Co alloy were investigated. WC and SiC powders were mixed, compacted and vacuum heated. Then they were recrushed to WC-SiC powders before addition to the cemented alloy. X-ray powder diffraction analysis was performed for the various WC-SiC powders. The (001) plane of tungsten carbide seemed to grow anisotropicaily in the WC-SiC powder which was vacuum heated to 1700℃. After mixing of the alloy powders, compacting and presintering, vacuum. sintering for the WC-SiC-6% Co alloys was performed at temperatures between 1450℃ and 1550℃. It is considered that SiC promoted the anisotropic grain growth of tungsten carbide in the directions parallel to (001) plane and consequently angular carbide grains seemed to appear in the microstructure of the cemented WC-SiC-6% Co alloy. Either increasing SiC content or raising sintering temperature promoted the growth of α₂ and Co grains in the WC-SiC-6% Co alloy.