18.97.14.88
18.97.14.88
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ECR 플라즈마를 이용한 화학증착법및 건식산화법에 의해 제조된 실리콘 산화막의 특성
Characteristics of Silicon Oxide Films Prepared by Chemical Vapor Deposition and Dry Oxidation Method Using ECR Plasma Sources
전법주 , 허정수 , 오인환 , 임태훈 , 윤용수 , 정일현 ( Bup Ju Jeon , Jung Soo Heo , In Hwan Oh , Tae Hoon Lim , Yong Soo Youn , Il Hyun Jung )
UCI I410-ECN-0102-2008-570-001891806
This article is 4 pages or less.
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