SiF, wa added into SiHH to deposit tnlycrystal-line silicon films at low temperatures around 400C in a renmte plasma enhanced chemical vapor depositum reactor. It was found out that the fluorine chemistry ubtaiued from SiH, nddilim had m influence un the chemical cumpositicm, crystttllinity, and sliccm clan-link bnuf density ul the film. Che fluorine chemistry reduced the amount of hydruen and oxygen incorpcr rated into the lilm and also suppressed thr formatim of pners in the gas phase. which helped he crysttllizatiun at law temperatures. Effect of SiF, ccmcentratiun its well as the deposition temperatur wats also