Aluminum has been used widely as a conducting material in the fabrication of integrated circuits, and chemical vapor deposition process for Al has been actively investigated for the application in ultra large scale integration. In this review, various precursors, mainly alkyl aluminum and alone compounds, and reaction. mechanisms of these precursors in Al CVD are described. Epitaxial growth and selectivity of the deposition are also discussed. in addition to thermal reactions, plasma and photochemical reactions are also briefly described.