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18.97.14.82
18.97.14.82
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Fabrication and Characteristics of Scaled SONOSFET Nonvolatile Memory Devices for Full - featured EEPROMs
Seon Ju Kim , Joo Yeon Kim , Sang Bae Yi , Sung Bae Lee , Kwang Yell Seo
UCI I410-ECN-0102-2008-560-002002434
This article is 4 pages or less.
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