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KCI등재

배전선로 고장인지 방식에 관한 연구

A Study on Improving of Fault Recognition Method in Distribution Line

이진 ( Jin Lee ) , 박찬 ( Chan Park )
  • : 한국전기전자재료학회
  • : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권1호
  • : 연속간행물
  • : 2020년 01월
  • : 65-69(5pages)

DOI


목차

1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
REFERENCES

키워드 보기


초록 보기


						
The aim of this study is to improve the fault decision ability of FRTU (Feeder remote terminal unit) in DAS (Distribution automation system). FRTU uses the FI (Fault indicator) algorithm based on fault current pickup and operation of the protection device. Even if the inrush current flows or the protection device is sensitive to the transient current, FRTU may indicate incorrect fault information. To address these problems, we propose an improved fault recognition algorithm that can be applied to FRTU. We will detect a specific wave that is indicative of a fault, and use this information to identify a fault wave. The specific wave-detection algorithm is based on the duration and periodicity of the voltage, current, and harmonic variations. In addition, we propose fault recognition algorithms using voltage factor variation analysis and DWT (Discrete wavelet transform). All the wave data used in this study were actual data stored in FRTU.

UCI(KEPA)

간행물정보

  • : 공학분야  > 전기공학
  • : KCI등재
  • :
  • : 격월
  • : 1226-7945
  • : 2288-3258
  • : 학술지
  • : 연속간행물
  • : 1988-2020
  • : 4435


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발행기관 최신논문
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1전력케이블 열화진단을 위한 극저주파 탄델타 판정기준의 통계적 해석

저자 : 정우성 ( Woosung Jung ) , 김성민 ( Seongmin Kim ) , 임장섭 ( Jangseob Lim ) , 이진 ( Jin Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 1호 발행 연도 : 2020 페이지 : pp. 1-5 (5 pages)

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In this study, the objective is to improve the criteria used for statistical comparison of the VLF tanδ (TD) database and failure rate according to water-tree degradation in underground distribution power cables. The aging condition of the KEPCO criteria is divided into 6 levels using the Weibull distribution, and the “failure imminent” condition is quantified by using the statistical end-point of the lifetime parameter of the VLF big-data group obtained from KEPCO. Moreover, new criteria with a 2-dimensional combination of TD, DTD, and a statistical normalized factor are suggested. These criteria exhibit high reproducibility for the detection of cables in an imminent failure state. Consequently, it is expected that the adoption of the extended VLF-2019 criteria will reduce the asset management cost of cable replacement compared to the VLF-2012 criteria of KEPCO.

2다양한 Passivation 물질에 따른 IGZO TFT Stability 개선 방법

저자 : 김재민 ( Jaemin Kim ) , 박진수 ( Jinsu Park ) , 윤건주 ( Geonju Yoon ) , 조재현 ( Jaehyun Cho ) , 배상우 ( Sangwoo Bae ) , 김진석 ( Jinseok Kim ) , 권기원 ( Keewon Kwon ) , 이윤정 ( Youn-jung Lee ) , 이준신 ( Junsin Yi )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 1호 발행 연도 : 2020 페이지 : pp. 6-9 (4 pages)

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Thin film transistors (TFTs) with large-area, high mobility, and high reliability are important factors for next-generation displays. In particular, thin transistors based on IGZO oxide semiconductors are being actively researched for this application. In this study, several methods for improving the reliability of a-IGZO TFTs by applying various materials on a passivation layer are investigated. In the literature, inorganic SiO2, TiO2, Al2O3, ZTSO, and organic CYTOP have been used for passivation. In the case of Al2O3, excellent stability is exhibited compared to the non-passivation TFT under the conditions of negative bias illumination stress (NBIS) for 3 wavelengths (R, G, B). When CYTOP passivation, SiO2 passivation, and non-passivation devices were compared under the same positive bias temperature stress (PBTS), the Vth shifts were 2.8 V, 3.3 V, and 4.5 V, respectively. The Vth shifts of TiO2 passivation and non-passivation devices under the same NBTS were -2.2 V and -3.8 V, respectively. It is expected that the presented results will form the basis for further research to improve the reliability of a-IGZO TFT.

3고출력 태양광 모듈을 위한 분할 셀 종류에 따른 슁글드 스트링 특성 시뮬레이션

저자 : 박지수 ( Ji Su Park ) , 오원제 ( Won Je Oh ) , 이재형 ( Jae Hyeong Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 1호 발행 연도 : 2020 페이지 : pp. 10-15 (6 pages)

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Recently, with the increase in the use of urban solar power, solar modules are required to produce high power in limited areas. In this report, we proposed the fabrication of a high-power photovoltaic module using shingles technology, and developed accurate string characteristic simulations based on circuit modeling. By comparing the resistance components between the interconnected cells and the cell strips, the ECA resistance was determined to be 0.003 Ω. Based on the equivalent circuit of the modeled shingled string, string simulation was performed according to the type of cell strip. As a result, it was determined that the cell efficiency of the 4-cell strip was the highest at 19.66%, but the efficiency of the string simulated with the 6-cell strip was the highest at 20.48% in the string unit.

4벌집구조의 나노채널을 이용한 다중 Fin-Gate GaN 기반 HEMTs의 제조 공정

저자 : 김정진 ( Jeong Jin Kim ) , 임종원 ( Jong Won Lim ) , 강동민 ( Dong Min Kang ) , 배성범 ( Sung Bum Bae ) , 차호영 ( Ho Young Cha ) , 양전욱 ( Jeon Wook Yang ) , 이형석 ( Hyeong Seok Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 1호 발행 연도 : 2020 페이지 : pp. 16-20 (5 pages)

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In this study, a patterning method using self-aligned nanostructures was introduced to fabricate GaN-based fin-gate HEMTs with normally-off operation, as opposed to high-cost, low-productivity e-beam lithography. The honeycomb-shaped fin-gate channel width is approximately 40~50 nm, which is manufactured with a fine width using a proposed method to obtain sufficient fringing field effect. As a result, the threshold voltage of the fabricated device is 0.6 V, and the maximum normalized drain current and transconductance of Gm are 136.4 mA/mm and 99.4 mS/mm, respectively. The fabricated devices exhibit a smaller sub-threshold swing and higher Gm peak compared to conventional planar devices, due to the fin structure of the honeycomb channel.

5임프린팅법을 이용한 YSnO 박막의 표면 이방성 획득과 액정 배향 특성 연구

저자 : 오병윤 ( Byeong-yun Oh )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 1호 발행 연도 : 2020 페이지 : pp. 21-24 (4 pages)

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We investigated a solution-driven Yttrium Tin Oxide (YSnO) film that was imprinted using a parallel nanostructure as a liquid crystal (LC) alignment layer. The imprinting process was conducted at the annealing temperature of 100℃. To evaluate the effect of this process, we conducted surface analyses including atomic force microscopy (AFM). During imprinting, the surface roughness was reduced, and anisotropic characteristics were observed. Planar LC alignment was observed at a pretilt angle of 0.22° on YSnO film. Surface anisotropy induced by imprinting method forces LC to align along the direction of the parallel nanostructure, which is an alternative to conventional polyimide treated using a rubbing process.

6고성능 유연 투명전극용 SiO2 기반 비대칭 다층 박막의 특성

저자 : 정지원 ( Ji-won Jeong ) , 공헌 ( Heon Kong ) , 이현용 ( Hyun-yong Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 1호 발행 연도 : 2020 페이지 : pp. 25-30 (6 pages)

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Oxide (SiO2)/Metal(Ag)/Oxide(SiO2, ITO, ZnO) multilayer films were fabricated using a magnetron sputtering technique at room temperature on Si (p-type, 100) and a glass substrate. The electrical and optical properties of the asymmetric multilayer films depended on the thickness of the mid-layer film and the type of oxide in the bottom layer. As the metal layer becomes thicker, the sheet resistance decreases. However, the transmittance decreases when the metal layer exceeds a threshold thickness of approximately 10~12 nm. In addition, the sheet resistance and transmittance change according to the type of oxide in the bottom layer. If the oxide has a large resistivity, the overall sheet resistance increases. In addition, the anti-reflection effect changes according to the refractive index of the oxide material. The optical and electrical properties of multilayer films were investigated using an ultraviolet visible (UV-Vis) spectrophotometer and a 4-point probe, respectively. The optimum structure is SiO2 (30 nm)/Ag (10 nm)/ZnO (30 nm) multilayer, with the highest FOM value of 7.7×10-3 Ω-1.

7전기영동 디스플레이에서 전자 잉크의 전류 특성 및 평가

저자 : 안형진 ( Hyeong-jin An ) , 김영조 ( Young-cho Kim )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 1호 발행 연도 : 2020 페이지 : pp. 31-36 (6 pages)

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An investigation was conducted to determine whether the ratio of the fluid to the charged particles affects the panel reflexibility rate and the drifting current flowing in the panel, in electrophoretic-based electronic paper. In this regard, three panels were produced in this study with the ratio of the charged particles to the fluid set as 1:5, 1:1, and 5:1. Each sample was driven using an identical input pulse, for which the current flowing in the panel and the output voltage of the photodiode were measured for the panel reflexibility rate. Consequently, the drifting current initially exhibited a peak value and a saturated value at a later point. This value was proportional to the ratio of the charged particles, and it was similar to this ratio when it is higher than 1:1. The output voltage of the photodiode due to the panel reflexibility rate was proportional to the ratio of the charged particles. However, the response speed decreased if the ratio was higher than 1:1. It is expected that the results of this study will contribute to the analysis of the charging of charged particles in electrophoretic-based electronic paper, and the selection of an appropriate concentration.

8마이크로파 소성법으로 제조한 BNT-ST 세라믹스의 유전 및 압전 특성

저자 : 이상훈 ( Sang-hun Lee ) , 김성현 ( Seong-hyun Kim ) , 에르키노프파루크 ( Farrukh Erkinov ) , 웬호앙티엔코이 ( Hoang Thien Khoi Nguyen ) , 즈엉짱안 ( Trang An Duong ) , 한형수 ( Hyoung-su Han ) , 이재신 ( Jae-shin Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 1호 발행 연도 : 2020 페이지 : pp. 37-44 (8 pages)

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This study investigated the microstructure and piezoelectric properties of lead-free 0.74(Bi1/2Na1/2)TiO3-0.26SrTiO3 (BNST26) piezoelectric ceramics sintered using a microwave furnace. For comparison, specimens were also prepared using a conventional furnace sintering (CFS). Average grain sizes of 2.4 μm and 3.2 μm were obtained in the sample sintered at 1,100℃ for 5 min using microwave sintering (MWS) and at 1,175℃ for 2 h using CFS, respectively. To quantify the changes in the microstructures and electrical properties according to the sintering conditions, the polarization hysteresis, bipolar and unipolar strain curves, and temperature dependence of permittivity were evaluated. As a result, it was determined that the Pmax (maximum polarization), Pr (remanent polarization) and Smax (maximum strain) values tend to increase with the average grain size. Based on these results, it is concluded that the MWS method can produce lead-free ceramics with superior performance in a relatively short time compared to the conventional CFS method.

9탄소나노튜브 가용체 초소형 퓨즈의 한계 전류 특성

저자 : 노성여 ( Seong Yeo Noh ) , 진상준 ( Sang Jun Jin ) , 이선우 ( Sunwoo Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 1호 발행 연도 : 2020 페이지 : pp. 45-49 (5 pages)

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In this paper, we prepared miniature fuse fabricated with carbon nanotube (CNT) fiber for the use of low rated current under 1 A and high speed operation under 4ms. CNT fuses were fabricated in the form of universal modular fuse (UMF) with different diameter of CNT fibers defined by multiplying the CNT threads. Electrical properties of the CNT fuses were measured such as resistance, rated current, and operation time with current. Resistance of the CNT fuse decreased and rated current increased with the diameter of the CNT fuses, respectively. Consequently, the operation time with current increased with the diameter of the CNT fuses. The CNT fuses fabricated in this work had broad range of low rated current from 0.05 to 1.25 A by multiplying the CNT threads. Operation time was measured about 3.6ms which was applicable to the UMF.

10기계적 분석을 통한 송전용 자기 애자의 열화 판단 및 파손 부위에 대한 연구

저자 : 손주암 ( Ju-am Son ) , 최인혁 ( In-hyuk Choi ) , 구자빈 ( Ja-bin Koo ) , 김태용 ( Taeyong Kim ) , 전성호 ( Seongho Jeon ) , 이윤정 ( Youn-jung Lee ) , 이준신 ( Junsin Yi )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 1호 발행 연도 : 2020 페이지 : pp. 50-55 (6 pages)

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Porcelain insulators have been used for a long time in 154 kV power transmission lines. They are likely to be exposed to sudden failure because of product deterioration. This study was conducted to evaluate the quality of porcelain insulators. After stresses were applied, the damaged regions of aged insulators were investigated in terms of chemical composition, material structure, and other properties. For porcelain insulators that were in service for a long time, the mechanical failure load was 126 kN, whereas the average mechanical failure load was 167.3 kN for new products. It was also determined that corrosion occurred at the metal pin part due to the penetration of moisture into the gap between the pin and the ceramic. Statistical analyses of failure were performed to identify the portion of the insulators that were broken. Cristobalite porcelain insulators fabricated without alumina additives had a high failure rate of 54% for the porcelain component. In the case of the addition of Alumina (Al2O3) to the porcelain insulators to improve the strength of the ceramic component, a more frequent damage rate of the cap and pin of 73.3% and 27%, respectively, was observed. This study reports on the material component of SiO2 and the percentage of alumina added, with respect to the mechanical properties of porcelain insulators.

12
주제별 간행물
간행물명 수록권호

KCI등재

센서학회지
29권 1호 ~ 29권 1호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 1호 ~ 33권 1호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권 1호 ~ 33권 1호

KCI등재

센서학회지
28권 6호 ~ 28권 6호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
32권 6호 ~ 32권 6호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
32권 6호 ~ 32권 6호

KCI등재

센서학회지
28권 5호 ~ 28권 5호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
32권 5호 ~ 32권 5호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
32권 5호 ~ 32권 5호

KCI등재

센서학회지
28권 4호 ~ 28권 4호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
32권 4호 ~ 32권 4호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
32권 4호 ~ 32권 4호

KCI등재

센서학회지
28권 3호 ~ 28권 3호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
32권 3호 ~ 32권 3호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
32권 3호 ~ 32권 3호

KCI등재

센서학회지
28권 2호 ~ 28권 2호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
32권 2호 ~ 32권 2호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
32권 1호 ~ 32권 1호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
32권 2호 ~ 32권 2호

KCI등재

센서학회지
28권 1호 ~ 28권 1호
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