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한국전기전자재료학회> Trans. Electr. Electron. Mater. (TEEM)> Regular Paper : Low-Temperature Poly-Si TFT Charge Trap Flash Memory with Sputtered ONO and Schottky Junctions

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Regular Paper : Low-Temperature Poly-Si TFT Charge Trap Flash Memory with Sputtered ONO and Schottky Junctions

Ho Myoung An , Jooyeon Kim
  • : 한국전기전자재료학회
  • : Trans. Electr. Electron. Mater. (TEEM) 16권4호
  • : 연속간행물
  • : 2015년 08월
  • : 187-189(3pages)

DOI


목차

1.INTRODUCTION
2.EXPERIMENTS
3.ESULTS AND DISCUSSION
4.CONCLUSIONS
ACKNOWLEDGMENT
REFERENCES

키워드 보기


초록 보기

 
A charge-trap flash (CTF) thin film transistor (TFT) memory is proposed at a low-temperature process (≤ 450℃). The memory cell consists of a sputtered oxide-nitride-oxide (ONO) gate dielectric and Schottky barrier (SB) source/drain (S/D) junctions using nickel silicide. These components enable the ultra-low-temperature process to be successfully achieved with the ONO gate stacks that have a substrate temperature of room temperature and S/D junctions that have an annealing temperature of 200℃. The silicidation process was optimized by measuring the electrical characteristics of the Ni-silicided Schottky diodes. As a result, the Ion/Ioff current ratio is about 1.4×105 and the subthreshold swing and field effect mobility are 0.42 V/dec and 14 cm2/V·s at a drain voltage of -1 V, respectively.

UCI(KEPA)

I410-ECN-0102-2016-560-000444388

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  • : 공학분야  > 전기공학
  • : KCI등재
  • : SCOPUS
  • : 격월
  • : 1229-7607
  • : 2092-7592
  • : 학술지
  • : 연속간행물
  • : 2000-2017
  • : 1027


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3Regular Paper : Effect of Particle Size on the Dielectric and Piezoelectric Properties of 0.95(K0.5Na0.5)NbO3-0.05BaTiO3 Lead-free Piezoelectric Ceramics

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This research investigates the impact of charge spreading on the data retention of three-dimensional (3D) siliconoxide-nitride-oxide-silicon (SONOS) flash memory where the charge trapping layer is shared along the cell string. In order to do so, this study conducts an electrical analysis of the planar SONOS test pattern where the silicon nitride charge storage layer is not isolated but extends beyond the gate electrode. Experimental results from the test pattern show larger retention loss in the devices with extended storage layers compared to isolated devices. This retention degradation is thought to be the result of an additional charge spreading through the extended silicon nitride layer along the width of the memory cell, which should be improved for the successful 3-D application of SONOS flash devices.

5Regular Paper : Low-Temperature Poly-Si TFT Charge Trap Flash Memory with Sputtered ONO and Schottky Junctions

저자 : Ho Myoung An , Jooyeon Kim

발행기관 : 한국전기전자재료학회 간행물 : Trans. Electr. Electron. Mater. (TEEM) 16권 4호 발행 연도 : 2015 페이지 : pp. 187-189 (3 pages)

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초록보기

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The microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow a carbon nanowall (CNW) on a silicon (Si) substrate with hydrogen (H2) and methane (CH4) gases. To find the growth mechanism of CNW, we increased the growth time of CNW from 5 to 30 min. The vertical and surficial conditions of the grown CNWs according to growth time were characterized by field emission scanning electron microscopy (FE-SEM). Energy dispersive spectroscopy (EDS) measurements showed that the CNWs consisted solely of carbon.

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This paper dealt with the condensing technology of an LED light source that uses a parabolic reflector to replace a searchlight equipped with a xenon lamp. A ray-tracing simulation was conducted to analyze the influence of the diameter of the reflector and the size of the light source on light condensing. The combination of a parabolic reflector with a diameter of 620 mm and a focal distance of 220 mm, and a 9 mm multi-chip package (MCP) with a luminous flux of 7,000 lm showed the narrowest beam angle. The luminous intensity at the center was measured at 7.7×106 cd. The distance between the light source and the point where the illuminance was 1 lx was calculated to be 2.8 km. The power consumption of the system was 95 W, which is only 9.5% of that of the 1 kW xenon searchlight, and the beam angle was 1.03°. In a site experiment, it was confirmed that the light ray reflected from the LED searchlight proceeds forward without any diffusion because of the narrow beam angle.

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We investigated the formation of a nanopyramidal structure and fabricated nanotextured Si solar cells using an Ag metal-assisted chemical etching process. The nanopyramidal structure was formed on a Si flat surface and the nanotexturing process was performed on the p-type microtextured Si surface. The nanostructural formation shows a transition from nanopits and nanopores to nanowires with etching time. The nanotextured surfaces also showed the photoluminescence spectra with an enhanced intensity in the wavelength range of 1,100~1,250 nm. The photoreflectance of the nanotextured Si solar cells was strongly reduced in the wavelength range of 337~596 nm. However, the quantum efficiency is decreased in the nanotextured samples due to the increased nanosurface recombination. The nanotexturing process provides a better p-n junction impedance of the nanotextured cells, resulting in an enhanced shunt resistance and fill factor which in turn renders the possibility of the increased conversion efficiency.

12
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간행물명 수록권호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권 4호 ~ 33권 4호

KCI등재

센서학회지
29권 3호 ~ 29권 3호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 3호 ~ 33권 3호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권 3호 ~ 33권 3호

KCI등재

센서학회지
29권 2호 ~ 29권 2호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 2호 ~ 33권 2호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권 2호 ~ 33권 2호

KCI등재

센서학회지
29권 1호 ~ 29권 1호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 1호 ~ 33권 1호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권 1호 ~ 33권 1호

KCI등재

센서학회지
28권 6호 ~ 28권 6호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
32권 6호 ~ 32권 6호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
32권 6호 ~ 32권 6호

KCI등재

센서학회지
28권 5호 ~ 28권 5호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
32권 5호 ~ 32권 5호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
32권 5호 ~ 32권 5호

KCI등재

센서학회지
28권 4호 ~ 28권 4호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
32권 4호 ~ 32권 4호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
32권 4호 ~ 32권 4호

KCI등재

센서학회지
28권 3호 ~ 28권 3호
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