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한국센서학회> 센서학회지> 화학센서 : 사진식각법을 이용한 FET 형 용존 CO2 센서의 수화젤막 및 가스 투과막 제작

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화학센서 : 사진식각법을 이용한 FET 형 용존 CO2 센서의 수화젤막 및 가스 투과막 제작

Chemical Sensors : Fabrication of Hydrogel and Gas Permeable Membranes for FET Type Dissolved CO2 Sensor by Photolithographic Method

박이순 , 김상대 , 고광락 ( Lee Soon Park , Sang Tae Kim , Kwang nak Koh
  • : 한국센서학회
  • : 센서학회지 6권3호
  • : 연속간행물
  • : 1997년 05월
  • : 207-213(7pages)

DOI


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ect transistor(FET) type dissolved carbon dioxide(pCO₂) sensor with a double layer structure of hydrogel membrane and CO₂ gas permeable membrane was fabricated by utilizing a H^+ ion selective field effect transister(pH-ISFET) with Ag/AgCl reference electrode as a base chip. Formation of hydrogel membrane with photo-crosslinkable PVA-SbQ or PVP-PVAc/photosensitizer system was not suitable with the photolithographic process. Furthermore, hydrogel membrane on pH-ISFET base chip could be fabricated by photolithographic method with the aid of N,N,N`,N`-tetramethyl ethylenediamine(TED) as O₂ quencher without using polyester film as a O₂ blanket during UV irradiation process. Photosensitive urethane acrylate type oligomer was used as gas permeable membrane on top of hydrogel layer. The FET type pCO₂ sensor fabricated by photolithographic method showed good linearity (linear calibration curve) in the range of 10^(-3)∼10 mole/ℓ of dissolved CO₂ in aqueous solution with high sensitivity.

UCI(KEPA)

I410-ECN-0102-2008-530-001331650

간행물정보

  • : 공학분야  > 전기공학
  • : KCI등재
  • :
  • : 격월
  • : 1225-5475
  • :
  • : 학술지
  • : 연속간행물
  • : 1992-2021
  • : 1827


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1물리센서 : 원격 측정을 위한 간섭형 광섬유 센서 시스템과 그의 압력 센서 응용

저자 : 예윤해 , 정환수 , 나도성 ( Yun Hae Yeh , Hwan Soo Jung , Doh Sung Lah

발행기관 : 한국센서학회 간행물 : 센서학회지 6권 3호 발행 연도 : 1997 페이지 : pp. 172-179 (8 pages)

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This paper describes a multiplexed-multivariate fiber-optic interferometric sensor system with remote sensing capability. Signal processor of the implemented sensor system is designed as a digital fringe counter that is well adapted to the signal processing of the remote fiber-optic Fabry-Perot interferometric sensor array. By summing up the reported optical data of the optical fiber, a guideline for choosing the optical effect suitable for a specific measurand is presented. As an example, a pressure sensing device that utilizes the strain-optic effect of the optical fiber by attaching it onto a stainless steel diaphragm of which diameter is 4.3 cm, is built and attached to the sensor system. The changes in optical phase difference of the fiber-optic Fabry-Perot interferometric pressure sensor while filling a water tank 2 meters high, was counted by the half-fringe counting signal processor. Test results showed that the measurement error is less than ±3.6 cm over the measured range of 2 meters.

2Sensitivity Improvement and Operating Characteristics Analysis of the Pressure Sensitive Field Effect Transistor ( PSFET ) Using Highly - Oriented ZnO Piezoelectric Thin Film

저자 : Jeong Chul Lee , Byung Woog Cho , Chang Soo Kim , Ki Hong Nam , Dae Hyuk Kwon Byung Ki Sohn

발행기관 : 한국센서학회 간행물 : 센서학회지 6권 3호 발행 연도 : 1997 페이지 : pp. 180-187 (8 pages)

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We demonstrate the improvement of sensitivity and analysis of operating characteristics of the piezoelectric pressure sensor using ZnO piezoelectric thin film and FET(field effect transistor) for sensing applied pressure and transforming the pressure into electrical signals, respectively. The sensitivity of the PSFET(pressure sensitive field effect transistor) was improved by using highly-oriented ZnO film perpendicular to the substrate surface and the operating characteristics was investigated by monitoring output voltage with time in various static pressure levels.

3물리센서 : MgO 기판 위에 올린 PLT 박막의 특성과 적외선 센서의 제작

저자 : 조성현 , 정재문 , 이재곤 , 함성호 , 김기완 , 최시영 ( Sung Hyun Cho , Jae Mun Jung , Jae Gon Lee , Ki Wan Kim , Sung Ho Hahm , Sie Young Choi

발행기관 : 한국센서학회 간행물 : 센서학회지 6권 3호 발행 연도 : 1997 페이지 : pp. 188-193 (6 pages)

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The lanthanum-modified lead titanate (PLT) thin films on (100) cleaved MgO single crystal substrate have been prepared by RF magnetron sputtering method using Pb0-rich target with oaring La contents. The substrate temperature, working pressure, Ar/O₂, and RF power dznsity of PLT thin films were 561℃, 10mTorr, 10/1, and 1.7W/㎠, respectively. In these conditions, the c-axis growth and tetragonality of the PLT thin films decreased for addition of La content and the PLT thin films showed diffuse phase transition from high temperature XRD patterns. The infrared sensor was fabricated. The remanent polarization was above 1.71 μC/㎠ and the pyroelectric voltage was above 500mV with 10:1 signal to noise ratio.

4물리센서 : 주파수 출력을 갖는 MAGFET Hybrid IC

저자 : 김시헌 , 이철우 , 남태철 ( Si Hon Kim , Cheol Woo Lee , Tae Chul Nam

발행기관 : 한국센서학회 간행물 : 센서학회지 6권 3호 발행 연도 : 1997 페이지 : pp. 194-199 (6 pages)

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When voltage or current gets out of the magnetic sensor as it is, we have often faced the problems such as introduction of noise and loss of voltage. In order to reduce these problems, a 2 drain MAGFET operating in the saturation region and fabricated by CMOS process, the system of I/V converter, VCO with operational amplifier, and V/F conversion circuits with Schmitt Trigger are designed and fabricated in one package. The absolute sensitivity of magnetic sensor shows 1.9 V/T and the product sensitivity is 3.2 x 10⁴ V/A·T. The characteristic of V/F conversion is very stabilized and has the value of 190 kHz/T.

5화학센서 : 저압화학기상성장법으로 제작된 SixOyNz 의 알칼리이온 감지성에 관한 연구

저자 : 신백균 , 이덕출 ( P . K . Shin , D . C . Lee

발행기관 : 한국센서학회 간행물 : 센서학회지 6권 3호 발행 연도 : 1997 페이지 : pp. 200-206 (7 pages)

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Using SiC1₂H₂, NH₃ and N₂O, we have fabricated silicon oxynitride (Si_xO_yN_z) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios(NH₃/N₂O) to 0.2, 0.5 and 2 with fixed gas flow of SiC1₂H₂. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.

6화학센서 : 사진식각법을 이용한 FET 형 용존 CO2 센서의 수화젤막 및 가스 투과막 제작

저자 : 박이순 , 김상대 , 고광락 ( Lee Soon Park , Sang Tae Kim , Kwang nak Koh

발행기관 : 한국센서학회 간행물 : 센서학회지 6권 3호 발행 연도 : 1997 페이지 : pp. 207-213 (7 pages)

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ect transistor(FET) type dissolved carbon dioxide(pCO₂) sensor with a double layer structure of hydrogel membrane and CO₂ gas permeable membrane was fabricated by utilizing a H^+ ion selective field effect transister(pH-ISFET) with Ag/AgCl reference electrode as a base chip. Formation of hydrogel membrane with photo-crosslinkable PVA-SbQ or PVP-PVAc/photosensitizer system was not suitable with the photolithographic process. Furthermore, hydrogel membrane on pH-ISFET base chip could be fabricated by photolithographic method with the aid of N,N,N`,N`-tetramethyl ethylenediamine(TED) as O₂ quencher without using polyester film as a O₂ blanket during UV irradiation process. Photosensitive urethane acrylate type oligomer was used as gas permeable membrane on top of hydrogel layer. The FET type pCO₂ sensor fabricated by photolithographic method showed good linearity (linear calibration curve) in the range of 10^(-3)∼10 mole/ℓ of dissolved CO₂ in aqueous solution with high sensitivity.

7화학센서 : 소산장 흡수를 이용한 박막 광도파로형 칼륨이온센서

저자 : 이수미 , 고광락 , 강신원 ( Su Mi Lee , Kwang Nak Koh , Shin Won Kang

발행기관 : 한국센서학회 간행물 : 센서학회지 6권 3호 발행 연도 : 1997 페이지 : pp. 214-220 (7 pages)

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A thin film optical waveguide sensor has been developed to measure and analyze quantitatively some inherent optical properties of biochemical substances. In this paper, two different kinds of thickness of thin film waveguide were prepared by RF sputtering of Corning-7059 glass(n = 1.588 at λ = 514nm, Ar laser) on Pyrex glass substrates. We made a sensing membrane coated on the thin film waveguide with the polyvinyl chloride-co-vinyl acetate-co-vinyl alcohol) ( 91 : 3 : 6 ) copolymer membrane based on H^+ -selective chromoionophore and K^+ -selective neutral ionophore and then proposed the thin film opptical waveguide ion sensor which can select a potassium ion. This sensor based on the absorbance change by utilizing chromoionophore and neutral ionophore, which changes their absorption spectrum in the UV-vis region upon complexation of the corresponding ionic species, have been reported. The sensitivity dependence of the proposed sensor on interaction length, waveguide thickness, and content of a chromoionophore was investigated. This sensor has the measurement range of 10^(-6) M∼IM for K^+ concentration and 90% response time of duration within 1 min. Also, our thin film optical waveguide sensor using the evanescent field was investigated as compared with conventional transmission sensor or optode sensor by the optical fiber. The sensitivity of thin-film waveguide K` sensor is higher than that of the conventional transmission sensor. The proposed sensor is expected to be useful to biochemical, medical, environmental inspection and so on.

8화학센서 : 유중 용존수소 감지를 위한 Pd/NiCr 게이트 MISFET 센서의 제작

저자 : 김갑식 , 이재곤 , 함성호 , 최시영 ( Gop Sick Kim , jae Gon Lee , Sung Ho Hahm , Sie Young Choi

발행기관 : 한국센서학회 간행물 : 센서학회지 6권 3호 발행 연도 : 1997 페이지 : pp. 221-227 (7 pages)

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The Pd/NiCr gate MISFET-type sensors were fabricated for detecting hydrogen dissolved in high-capacivity transformer oil. To improve stability and high concentration sensitivity of seztsvr, Pd/NiCr double catalysis metal gate was used. To reduce the serious gate voltage drift of the sensor induced by hydrogen, the gate insulators of 2 FETs were constructed with double layer of silicon dioxide and silicon nitride. The hydrogen sensitivity of the Pd/NiCr gate MISFET is about a half of Pd/Pt gate MISFET`s sensitivity but the Pd/NiCr gate MISFET has good stability and high concentration detectivity up to 1000 ppm.

9센서 시스템 및 응용 : 8051 마이크로 콘트롤러를 이용한 휴대용 방사능 측정기의 카운터 프로그램 연구

저자 : 김용득 , 박 세광 ( Yong Duk Kim , Se Kwang Park

발행기관 : 한국센서학회 간행물 : 센서학회지 6권 3호 발행 연도 : 1997 페이지 : pp. 228-236 (9 pages)

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Radioactive materials need to control, measure and protect precisely the overflow because they are dangerous. In this paper, GM-counter type radiation detector system, that can precisely measure the quantity of radioactivity using improved counting program is designed and program that can store and transfer the counted data is studied. The manufactured system, counting system of GM-counter type radiation detector, and counter program can be utilized to measure them at various methods in an atomic power plant and research centers.

10Fabrication of low power micro - heater for micro - gas sensor 2 . Characteristics of micro - gas sensor

저자 : Wan Young Chung , Sang Moon Lee , Bong Hwi Kang , Dong Kun Jang , Duk Dong Lee , Noboru Yamazoe

발행기관 : 한국센서학회 간행물 : 센서학회지 6권 3호 발행 연도 : 1997 페이지 : pp. 237-244 (8 pages)

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A new planar-type microsensor, which had a platinum heater and a sensing layer on the same plane was fabricated on silicon substrate with stress-relieved PSG(phosphosilicate glass)/Si₃N₄(8(10nm/150nm) diaphragm. The proposed planar-type microsensor could be fabricated by simple silicon process using only 3 masks for photolithography process compared with 5 or 6 masks of the typical micro-gas sensor. The thermal properties of the microsensor from thermal simulation were compared with those of the fabricated microheater. Although there are some discrepancy between the simulation result and the result from the fabricated microheater, the thermal simulation by FEM was proved to be an useful method to evaluate the thermal properties of microheater. The sensing characteristics of the fabricated microsensor with the planar-type heater were investigated also.

12
주제별 간행물
간행물명 수록권호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
34권 2호 ~ 34권 2호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
34권 2호 ~ 34권 2호

KCI등재

센서학회지
30권 1호 ~ 30권 1호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
34권 1호 ~ 34권 1호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
34권 1호 ~ 34권 1호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
34권 1호 ~ 34권 1호

KCI등재

센서학회지
29권 6호 ~ 29권 6호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 6호 ~ 33권 6호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권 6호 ~ 33권 6호

KCI등재

센서학회지
29권 5호 ~ 29권 5호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 5호 ~ 33권 5호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권 5호 ~ 33권 5호

KCI등재

센서학회지
29권 4호 ~ 29권 4호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 4호 ~ 33권 4호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권 4호 ~ 33권 4호

KCI등재

센서학회지
29권 3호 ~ 29권 3호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 3호 ~ 33권 3호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권 3호 ~ 33권 3호

KCI등재

센서학회지
29권 2호 ~ 29권 2호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 2호 ~ 33권 2호
발행기관 최신논문
자료제공: 네이버학술정보
발행기관 최신논문
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