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한국센서학회> 센서학회지> 화학센서 : Photolithography 에 의한 FET 형 Ca2+ 센서의 제작 및 특성

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화학센서 : Photolithography 에 의한 FET 형 Ca2+ 센서의 제작 및 특성

Chemical Sensors : Fabrication of FET - Type Ca2+ Sensor by Photolithographic Method and Its Characteristics

박이순 , 허영준 , 손병기 ( Lee Soon Park , Young Jun Hur , Byung Ki Sohn
  • : 한국센서학회
  • : 센서학회지 5권1호
  • : 연속간행물
  • : 1996년 01월
  • : 15-22(8pages)

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FET type Ca^(2+)sensor(Ca-ISFET) was fabricated by micropool and photolithographic method utilizing photosensitive polymer as membrane materials. When OMR-83 negative photoresist was used as membrane material, it gave good sensitivity by micropool method with dioctyladipate as plasticizer but it could not be used in the photolithographic method. When poly(vinyl butyral), PVB was used as membrane material, it gave relatively high sensitivity (23±0.2 mV/decade) for Ca^(2+) concentration range of 10^(-4)∼10^(-1) mole/ℓ by photolithographic method. PVB also provided good adhesion to the pH-ISFET base device without adhesion promoter pretreatment and any plasticizer.

UCI(KEPA)

I410-ECN-0102-2008-530-001332546

간행물정보

  • : 공학분야  > 전기공학
  • : KCI등재
  • :
  • : 격월
  • : 1225-5475
  • :
  • : 학술지
  • : 연속간행물
  • : 1992-2021
  • : 1827


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1물리센서 : PLT 박편을 이용한 초전형 적외선 센서의 제작

저자 : 김영일 , 노용래 ( Young Eil Kim , Yong Rae Roh

발행기관 : 한국센서학회 간행물 : 센서학회지 5권 1호 발행 연도 : 1996 페이지 : pp. 1-8 (8 pages)

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High-sensitive pyroelectric infrared sensors have been fabricated with La-modified PbTiO₃(PLT) thin plates. The PLT thin plates have the composition of (Pb_(0.9)La_(0.1)Ti_(0.75)O₃) _(0.75)(PbO)_(0.25). Thickness of the thin plates is 100 ㎛. Top side electrodes exposed to IR are vacuum evaporated Ni-Cr, and bottom side electrodes are Ag. Each one takes the area of 1 x 2 ㎟. The thin plates have a large resistivity of 6.41 x 10 Ω·cm and a relative dielectric constant of 341. They have a high figure of merit of 4.0 x 10^(-11) Ccm/J due to its high pyroelectric coefficient of 4.45 x l0^(-8)C/㎠K. The sensors show such a large voltage responsivity as 2501 V/W. That they can find practical applications like the pyroelectric infrared detectors.

2물리센서 : 고주파특성 측정을 통한 barium titanate 의 주파수센서 및 온도센서 연구

저자 : 김진옥 , 한만흥 ( J . O . Kim , M . H . Han

발행기관 : 한국센서학회 간행물 : 센서학회지 5권 1호 발행 연도 : 1996 페이지 : pp. 9-14 (6 pages)

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The effect on the microwave properties was investigated for the barium titanate doped with impurity of WO₃ 0.230 mole% produced by convetional solid state reaction method. Microwave resistance, reactance and impedance of the barium titanate were measured with 2-port s-parameter method by using network analyzer, in the range of room temperature to 160℃ and of frequency 300 kHz to 300 MHz. And possibility of frequency sensor and temperature sensor was estimated with barium titanate doped with WO₃.

3화학센서 : Photolithography 에 의한 FET 형 Ca2+ 센서의 제작 및 특성

저자 : 박이순 , 허영준 , 손병기 ( Lee Soon Park , Young Jun Hur , Byung Ki Sohn

발행기관 : 한국센서학회 간행물 : 센서학회지 5권 1호 발행 연도 : 1996 페이지 : pp. 15-22 (8 pages)

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FET type Ca^(2+)sensor(Ca-ISFET) was fabricated by micropool and photolithographic method utilizing photosensitive polymer as membrane materials. When OMR-83 negative photoresist was used as membrane material, it gave good sensitivity by micropool method with dioctyladipate as plasticizer but it could not be used in the photolithographic method. When poly(vinyl butyral), PVB was used as membrane material, it gave relatively high sensitivity (23±0.2 mV/decade) for Ca^(2+) concentration range of 10^(-4)∼10^(-1) mole/ℓ by photolithographic method. PVB also provided good adhesion to the pH-ISFET base device without adhesion promoter pretreatment and any plasticizer.

4화학센서 : 병열형가열부를 이용한 후막형 접촉연소식 가스센서 제조

저자 : 박준식 , 이재석 , 홍성제 , 박효덕 , 신상모 ( Jun Sik Park , Jae Suk Lee , Sung Jei Hong , Hyo Derk Park , Sang Mo Shin

발행기관 : 한국센서학회 간행물 : 센서학회지 5권 1호 발행 연도 : 1996 페이지 : pp. 23-29 (7 pages)

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Thick film type gas sensors with parallel Pt heaters were fabricated by screen printing process and investigated sensitivities for methane gas. The TR7905 was selected as Pt paste for heater by characterization the properties of TCRs and thick film microstructures. The average resistance of parallel Pt heaters was 1.8Ω, and the best TCR obtained was 3685 ppm/℃. do the top of the Pt heaters, a sensing layer added with Pt and Pd as catalyst paste was screen printed and heat treated. The sensitivity of the sensor was 4.3mV/1000ppm for methane. The power consumption of the sensors was 2.12watts.

5화학센서 : 열처리에 따른 ZnO 박막의 TMA 가스 검지 특성

저자 : 박성현 ( Sung Hyun Park ) , 최혁환 ( Hyek Hwan Choi ) , 류지열 ( Jee Youl Ryu ) , 권태하 ( Tae Ha Kwon )

발행기관 : 한국센서학회 간행물 : 센서학회지 5권 1호 발행 연도 : 1996 페이지 : pp. 30-36 (7 pages)

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ZnO thin-film sensors were fabricated by RF magnetron sputtering method. $quot;`he composition of the device material was 4 wt. % Al₂O₃, 1 wt. % TiO₂ and 0.2 wt. V₂O_5 on the basis of ZnO material for developing the high sensitive TMA gas sensor which have an appropriate resistivity and the stability for practical use. They were also grown on the SiO₂/Si substrates heated at 250 ℃ under a pure oxygen pressure of about 10 mTorr with a power of about 80 watts for 10 minutes. So as to enhance the stability of the resistivity, the thin films were annealed from 400 ℃ to 800 v. The sensors made with the thin film which were annealed at 700 ℃ for 60 minutes in pure oxygen gas exhibited a good sensing properties for TMA gas. The thin film grown at this condition showed the maximum sensitivity of 550 in TMA gas concentration of 160 ppm, and exhibited a good stability and excellent linearity.

6화학센서 : Zinc acetate 를 precursor 로 한 고저항 ZnO 막의 제조 및 습도감지 특성

저자 : 마대영 , 김상현 , 김영일 ( T . Y . Ma , S . H . Kim , Y . I . Kim

발행기관 : 한국센서학회 간행물 : 센서학회지 5권 1호 발행 연도 : 1996 페이지 : pp. 37-42 (6 pages)

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ZnO films have been deposited on oxide grown Si wafers by the conventional thermal evaporation method. Anhydrous zinc acetate was directly heated and sublimed in the laboratory-made brass boat. The substrates temperature varied from 200℃ to 600℃. Oxygen has been flowed into the deposition chamber to change the partial pressure of oxygen. The films deposited at high oxygen pressure exhibited higher resistivity than films at low pressure. X-Ray Diffraction(XRD), Energy Dispersive Spectroscopy(EDS) and Rutherford Backscattering Spectrometry RBS) were conducted on the films to reveal the crystallinity and composition of the ZnO films. The ZnO films deposited at high oxygen pressure were extremly sensitive to the humidity of higher than 70 % RH.

7센서 시스템 및 응용 : 전용 CMOS IC 에 의한 다중 생체 텔레미트리 시스템 제작

저자 : 최세곤 , 서희돈 , 박종대 , 김재문 ( Se Gon Choi , Hee Don Seo , Jong Dae Park , Jae Mun Kim

발행기관 : 한국센서학회 간행물 : 센서학회지 5권 1호 발행 연도 : 1996 페이지 : pp. 43-50 (8 pages)

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This paper presents a manufacture of the multiple subjects biotelemetry system using custom CMOS IC fabricated 1.5,um n-well process technology. The implantable circuits of the system except sensor interface circuits including FM transmitter are fabricated on a single chip with the size of 4 x q mm. It is possible to assemble the implantable system in a hybrid package as small as 3 x 3 x 2.5cm by using this chip. It`s main function is to enable continuous measurement simultaneously up to 7-channel physiological signals from the selected one among 8 subjects. Another features of this system are to enable continuous measurement of physiological signals, and to accomplish ON/OFF switching of an implanted battery by subject selection signal with command signal from the external circuit.  If this system is coupled with another appropriate sensors in medical field, various physiological parameters such as pressure, pH and temperature are to be measured effectively in the near future.

8Structural Studies of Thin Film Boron Nitride by X - ray Photoelectron Spectroscopy 1

저자 : Jong Seong kim

발행기관 : 한국센서학회 간행물 : 센서학회지 5권 1호 발행 연도 : 1996 페이지 : pp. 51-56 (6 pages)

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Structural properties of rf sputtered boron nitride films were studied as a function of deposition parameters such as nitrogen pressure, substrate temperature and substrate bias using X-ray photoelectron spectroscopy and Auger electron spectroscopy. Composition and information on chemical bonding of resultant films was determined by XPS. XPS core level spectra showed that ratio of boron to nitrogen varied from 3.11 to 1.45 with respect to partial nitrogen pressure. Curve fitting of XPS spectra revealed three kinds of bonding mechanism of boron in the films. XPS peak positions of both B 1s and N 1s shifted to higher energy with higher nitrogen pressure as well as increase in substrate bias voltage. AES was used to see possible contamination of films by carbon or oxygen as well.

9센서 재료 및 제조공정 : 다결정 실리콘을 이용한 p+n 다이오드의 누설전류 개선

저자 : 김원찬 , 이재곤 , 최시영 ( Weon Chan Kim , Jae Con Lee , Sie Young Choi

발행기관 : 한국센서학회 간행물 : 센서학회지 5권 1호 발행 연도 : 1996 페이지 : pp. 57-62 (6 pages)

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To decrease the leakage current of p^+n junction diode with hyperabrupt structure, the 3000Å polysilicon was deposited on the top of conventional p^+n diode and then annealed for 30 minutes at 900℃ in the N₂ ambient. It was estimated for both p^+n diodes with and without polysilicon layer, and the impurity materials of n diffused layer to observe the influence of the polysilicon layer on leakage current characteristics. The leakage current was reduced to the order of 3 by using polysilicon layer. A large number of dislocation loops, which were believed to be generated by As-implanted diffused layer, were found to be removed by using polysilicon through TEM analysis.

10센서 재료 및 제조공정 : RTCVD 법으로 성장한 실리콘 에피막의 특성

저자 : 정욱진 , 권영규 , 배영호 , 김광일 , 강봉구 , 손병기 ( W. J . Chung , Y . K . Kwon , Y . H . Bae , K . I . KIm , B . K . Kang , B . K . Sohn

발행기관 : 한국센서학회 간행물 : 센서학회지 5권 1호 발행 연도 : 1996 페이지 : pp. 63-70 (8 pages)

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Silicon epitaxial films of submicron level were successfully grown by the RTCVD method. For the growth of silicon epitaxial layers, SiH₂Cl₂/ H₂ gas mixtures and various process parameters including Hz prebake process were used. The growth conditions were varied to investigate their effects on the interface abruptness of doping profile, the film growth rates and crystalline properties. The crystallinity of the undoped silicon was excellent at the growth temperature of 900℃. The doping profiles were measured by SIMS technique. The abruptness of doping profile would be controlled within about 200A /decade in the structure of undoped Si / n^+ -Si substrate.

12
주제별 간행물
간행물명 수록권호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
34권 2호 ~ 34권 2호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
34권 2호 ~ 34권 2호

KCI등재

센서학회지
30권 1호 ~ 30권 1호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
34권 1호 ~ 34권 1호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
34권 1호 ~ 34권 1호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
34권 1호 ~ 34권 1호

KCI등재

센서학회지
29권 6호 ~ 29권 6호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 6호 ~ 33권 6호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권 6호 ~ 33권 6호

KCI등재

센서학회지
29권 5호 ~ 29권 5호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 5호 ~ 33권 5호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권 5호 ~ 33권 5호

KCI등재

센서학회지
29권 4호 ~ 29권 4호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 4호 ~ 33권 4호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권 4호 ~ 33권 4호

KCI등재

센서학회지
29권 3호 ~ 29권 3호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 3호 ~ 33권 3호

KCI등재

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권 3호 ~ 33권 3호

KCI등재

센서학회지
29권 2호 ~ 29권 2호

E²M-전기 전자와 첨단 소재(구 전기전자재료)
33권 2호 ~ 33권 2호
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