간행물

한국전기전자재료학회> 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) update

Journal of the Korean Institute of Electrical and Electronic Material Engineers

  • : 한국전기전자재료학회
  • : 공학분야  >  전기공학
  • : KCI등재
  • :
  • : 연속간행물
  • : 격월
  • : 1226-7945
  • : 2288-3258
  • : 전기전자재료학회지(~1997)→전기전자재료학회논문지

수록정보
수록범위 : 1권1호(1988)~31권6호(2018) |수록논문 수 : 4,312
전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
31권6호(2018년 09월) 수록논문
최근 권호 논문
| | | |

KCI등재

1HVPE 방법으로 성장한 Alpha-Ga2O3의 특성 분석

저자 : 손호기 ( Hoki Son ) , 라용호 ( Yong-ho Ra ) , 이영진 ( Young-jin Lee ) , 이미재 ( Mi-jai Lee

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 6호 발행 연도 : 2018 페이지 : pp. 357-361 (5 pages)

다운로드

(기관인증 필요)

초록보기

We demonstrated a crack-free α-Ga2O3 on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and N2 was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and 450~490℃, respectively. The surface of α-Ga2O3 template grown at 470℃ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of α-Ga2O3 on sapphire can be controlled by varying the HCl flow rate and growth temperature.

KCI등재

2온도에 따른 4H-SiC에 기반한 SBD, PiN 특성 비교

저자 : 서지호 ( Ji-ho Seo ) , 조슬기 ( Seulki Cho ) , 이영재 ( Young-jae Lee ) , 안재인 ( Jae-in An

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 6호 발행 연도 : 2018 페이지 : pp. 362-366 (5 pages)

다운로드

(기관인증 필요)

초록보기

Silicon carbide is widely used in power semiconductor devices owing to its high energy gap. In particular, Schottky barrier diode (SBD) and PiN diodes fabricated on 4H-SiC wafers are being applied to various fields such as power devices. The characteristics of SBD and PiN diodes can be extracted from C-V and I-V characteristics. The measured Schottky barrier height (SBH) was 1.23 eV in the temperature range of 298~473 K, and the average ideal factor is 1.17. The results show that the device with the Schottky contact is characterized by the theory of thermal emission. As the temperature increases, the parameters are changed and the Vth is shifted to lower voltages.

KCI등재

34H-SiC JBS Diode의 전기적 특성 분석

저자 : 이영재 ( Young-jae Lee ) , 조슬기 ( Seulki Cho ) , 서지호 ( Ji-ho Seo ) , 민성지 ( Seong-ji

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 6호 발행 연도 : 2018 페이지 : pp. 367-371 (5 pages)

다운로드

(기관인증 필요)

초록보기

1,200 V class junction barrier schottky (JBS) diodes and schottky barrier diodes (SBD) were simultaneously fabricated on the same 4H-SiC wafer. The resulting diodes were characterized at temperatures from room temperature to 473 K and subsequently compared in terms of their respective I-V characteristics. The parameters deduced from the observed I-V measurements, including ideality factor and series resistance, indicate that, as the temperature increases, the threshold voltage decreases whereas the ideality factor and barrier height increase. As JBS diodes have both Schottky and PN junction structures, the proper depletion layer thickness, Ron, and electron mobility values must be determined in order to produce diodes with an effective barrier height. The comparison results showed that the JBS diodes exhibit a larger effective barrier height compared to the SBDs.

KCI등재

4오프 상태 스트레스에 의한 에이징된 P형 Poly-Si TFT에서의 GIDL 전류의 특성

저자 : 신동기 ( Donggi Shin ) , 장경수 ( Kyungsoo Jang ) , Nguyen Thi Cam Phu , 박희준 ( Hee

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 6호 발행 연도 : 2018 페이지 : pp. 372-376 (5 pages)

다운로드

(기관인증 필요)

초록보기

The effects of off-state bias stress on the characteristics of p-type poly-Si TFT were investigated. To reduce the gate-induced drain leakage (GIDL) current, the off-state bias stress was changed by varying Vgs and Vds. After application of the off-state bias stress, the Vgs causing GIDL current was dramatically increased from 1 to 10 V, and thus, the Vgs margin to turn off the TFT was improved. The on-current and subthreshold swing in the aged TFT was maintained. We performed a technology computer-aided design (TCAD) simulation to describe the aged characteristics. The aged-transfer characteristics were well described by the local charge trapping. The activation energy of the GIDL current was measured for the pristine and aged characteristics. The reduced GIDL current was mainly a thermionic field-emission current.

KCI등재

5SiGe에 이온 주입과 열처리에 의한 불순물 분포의 연구

저자 : 정원채 ( Won-chae Jung )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 6호 발행 연도 : 2018 페이지 : pp. 377-385 (9 pages)

다운로드

(기관인증 필요)

초록보기

For the investigation of dopant profiles in implanted Si1-xGex, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in Si1-xGex are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of Rp and 1.8% deviations of ΔRp owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of Rp and 8.1% deviations of ΔRp in the arsenic implanted Si0.2Ge0.8 layer and 8.5% deviations of Rp and 38% deviations of ΔRp in the Si0.5Ge0.5 layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the Si1-xGex layer becomes more important for accurate device scaling and fabrication technologies.

KCI등재

6HVPE법을 이용하여 PSS와 AlN Buffered PSS 위에 성장시킨 GaN 박막의 결정 특성

저자 : 이원준 ( Won Jun Lee ) , 박미선 ( Mi Seon Park ) , 이원재 ( Won Jae Lee ) , 김일수 ( Il Su K

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 6호 발행 연도 : 2018 페이지 : pp. 386-391 (6 pages)

다운로드

(기관인증 필요)

초록보기

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

KCI등재

7수열합성 공정 변화에 따른 ZnS 나노분말의 구조 특성과 소결체의 광학적 특성

저자 : 여서영 ( Seo-yeong Yeo ) , 권태형 ( Tae-hyeong Kwon ) , 김창일 ( Chang-il Kim ) , 윤지선 ( J

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 6호 발행 연도 : 2018 페이지 : pp. 392-397 (6 pages)

다운로드

(기관인증 필요)

초록보기

In this paper, the ZnS nanoparticles were synthesized according to the process conditions of hydrothermal synthesis. When the molar ratio of Zn to S was 1:1.2, it was confirmed that it had a cubic single phase and a high crystal phase. After the molar ratio is fixed, hydrothermal synthesis was conducted at 180℃ for 24, 36, 72 and 96 h in order to confirm the structural change with the change of hydrothermal synthesis times. As the hydrothermal synthesis times increased, the particle size increased. The hydrothermal synthesized particle size for 72 h was considered to be suitable for sintering. The ZnS ceramic had a density of 99.7% and an excellent transmittance of ~70% in the long-wavelength region.

KCI등재

8Dual 주파수를 이용한 Data 전송에 관한 연구

저자 : 이진 ( Jin Lee ) , 박성수 ( Sung Soo Park )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 6호 발행 연도 : 2018 페이지 : pp. 398-402 (5 pages)

다운로드

(기관인증 필요)

초록보기

The following conclusions were obtained after analyzing the data transmission characteristics using two frequencies and studying a system that selects data with a good reception frequency as a priority data. Data transmission and reception using two frequencies were measured at -41 to -51 dBm when the frequency was normal, and data transmitted at 900 MHz was selected as priority data. When priority frequency failure occurred, the frequency reception data of the next rank was automatically adopted, and when the frequency of the next rank was disturbed, the priority frequency search was performed again. The above results show that the use of two frequencies enables more stable data transmission and transmission, and further studies should be continued to expand the transmission and reception distances.

KCI등재

9마이크로웨이브 응용을 위한 솔-젤법으로 제작한 K(Ta0.6Nb0.4)O3 박막의 유전 특성

저자 : 권민수 ( Min-su Kwon ) , 이성갑 ( Sung-gap Lee ) , 김경민 ( Kyeong-min Kim ) , 이삼행 ( Sam-

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 6호 발행 연도 : 2018 페이지 : pp. 403-407 (5 pages)

다운로드

(기관인증 필요)

초록보기

In this study, double layer KTN/STO thin films were fabricated on Pt/Ti/SiO2/Si substrate, their structural and electrical properties were measured according with the number of STO coatings, and their applicability to microwave materials was investigated. The average grain size was about 80~90 nm, the average thickness of the 6-coated KTN thin film was about 320 nm, and the average thickness of the STO thin film coated once was about 45~50 nm. The dielectric constant decreased with increasing frequency, and as the number of STO coatings increased, the rate of change of the dielectric constant with the applied electric field decreased. The tunability of the KTN thin film showed a maximum value of 19.8% at 3 V. The figure of merit of the KTN/1STO thin film was 9.8 at 3 V.

KCI등재

10PDMS 굴절 조정층이 Mn-Doped SnO2 (MTO)/Ag/MTO/PDMS/MTO 투명전극의 특성에 미치는 영향

저자 : 조영수 ( Young-su Jo ) , 장건익 ( Gun-eik Jang )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 6호 발행 연도 : 2018 페이지 : pp. 408-411 (4 pages)

다운로드

(기관인증 필요)

초록보기

We fabricated highly flexible Mn-doped SnO2 (MTO)/Ag/MTO/polydimethylsiloxane (PDMS)/MTO multilayer transparent conducting films. To reduce refractive-index mismatching of the MTO/Ag/MTO/polyethylene terephthalate (PET), index-matching layers were inserted between the oxide-metal-oxide-structured films and the PET substrate. The PDMS layer was deposited by spin-coating after adjusting the mixing ratio of PDMS and hexane. We investigated the effects of the index-matching layer on the color and reflectance differences with different PDMS dilution ratios. As the dilution ratio increased from 1:100 to 1:130, the color difference increased slightly, while the reflectance difference decreased from 0.62 to 0.32. The MTO/Ag/MTO/PDMS/MTO film showed a transmittance of 87.18~87.68% at 550 nm. The highest value of the Haacke figure of merit was 47.54×10-3 Ω-1 for the dilution ratio of 1:130.

12
권호별 보기
가장 많이 인용된 논문

(자료제공: 네이버학술정보)

가장 많이 인용된 논문
| | | |
1연안해역에서 석유오염물질의 세균학적 분해에 관한 연구

(2006)홍길동 외 1명심리학41회 피인용

다운로드

2미국의 비트코인 규제

(2006)홍길동심리학41회 피인용

다운로드

가장 많이 참고한 논문

(자료제공: 네이버학술정보)

가장 많이 참고한 논문

다운로드

2미국의 비트코인 규제

(2006)홍길동41회 피인용

다운로드

해당 간행물 관심 구독기관

조선대학교 국회도서관 선문대학교 원광대학교 경희대학교
 42
 35
 12
 10
 9
  • 1 조선대학교 (42건)
  • 2 국회도서관 (35건)
  • 3 선문대학교 (12건)
  • 4 원광대학교 (10건)
  • 5 경희대학교 (9건)
  • 6 부산대학교 (9건)
  • 7 한국산업기술대학교 (9건)
  • 8 서울대학교 (7건)
  • 9 가천대학교 (6건)
  • 10 연세대학교 (6건)

내가 찾은 최근 검색어

최근 열람 자료

맞춤 논문

보관함

내 보관함
공유한 보관함

1:1문의

닫기