간행물

한국전기전자재료학회> 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) update

Journal of the Korean Institute of Electrical and Electronic Material Engineers

  • : 한국전기전자재료학회
  • : 공학분야  >  전기공학
  • : KCI등재
  • :
  • : 연속간행물
  • : 격월
  • : 1226-7945
  • : 2288-3258
  • : 전기전자재료학회지(~1997)→전기전자재료학회논문지

수록정보
수록범위 : 1권1호(1988)~32권5호(2019) |수록논문 수 : 4,402
전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
32권5호(2019년 09월) 수록논문
최근 권호 논문
| | | |

KCI등재

1무기막 NiOx의 정렬 패턴 전사를 이용한 액정의 배향 특성 연구

저자 : 오병윤 ( Byeong-yun Oh )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 32권 5호 발행 연도 : 2019 페이지 : pp. 357-360 (4 pages)

다운로드

(기관인증 필요)

초록보기

We demonstrate an alignment technology using an imprinting process on an inorganic NiOx film. The aligned nanopattern was fabricated on a silicon wafer by laser interference lithography. The aligned nano pattern was then imprinted onto the sol-gel driven NiOx film using an imprinting process at an annealing temperature of 150℃. After the imprinting process, parallel grooves had been formed on the NiOx film. Atomic force microscopy and water contact angle measurements were performed to confirm the parallel groove on the NiOx film. The grooves caused liquid crystal alignment through geometric restriction, similar to grooves formed by the rubbing process on polyimide. The liquid crystal cell exhibited a pretilt angle of 0.2°, which demonstrated homogeneous alignment.

KCI등재

2Trench Gate 하단 P-영역을 갖는 IGBT의 전기적 특성에 관한 연구

저자 : 안병섭 ( Byoung Sub Ann ) , 육진경 ( Jinkeoung Yuek ) , 강이구 ( Ey Goo Kang )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 32권 5호 발행 연도 : 2019 페이지 : pp. 361-365 (5 pages)

다운로드

(기관인증 필요)

초록보기

Although there is no strict definition of a power semiconductor device, a general description is a semiconductor that has capability to control more than 1 W of electricity. Integrated gate bipolar transistors (IGBTs), which are power semiconductors, are widely used in voltage ranges above 300 V and are especially popular in high-efficiency, high-speed power systems. In this paper, the size of the gate was adjusted to test the variation in the yield voltage characteristics by measuring the electric field concentration under the trench gate. After the experiment Synopsys' TCAD was used to analyze the efficiency of threshold voltage, on-state voltage drop, and breakdown voltage by measuring the P- region and its size under the gate.

KCI등재

3600 V급 IGBT Single N+ Emitter Trench Gate 구조에 따른 전기적 특성

저자 : 신명철 ( Myeong Cheol Shin ) , 육진경 ( Jinkeoung Yuek ) , 강이구 ( Ey Goo Kang )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 32권 5호 발행 연도 : 2019 페이지 : pp. 366-370 (5 pages)

다운로드

(기관인증 필요)

초록보기

In this paper, a single N+ emitter trench gate-type insulated gate bipolar transistor (IGBT) device was studied using T-CAD, in order to achieve a low on-state voltage drop (Vce-sat) and high breakdown voltage, which would reduce power loss and device reliability. Using the simulation, the threshold voltage, breakdown voltage, and on-state voltage drop were studied as a function of the temperature, the length of time in the diffusion process (drive-in) after implant, and the trench gate depth. During the drive-in process, a 20℃ change in temperature from 1,000 to 1,160℃ over a 150 minute time frame resulted in a 1 to 4 V change in the threshold voltage and a 24 to 2.6 V change in the on-state voltage drop. As a result, a 0.5 um change in the trench depth of 3.5 to 7.5 um resulted in the breakdown voltage decreasing from 802 to 692 V.

KCI등재

4비정질 인듐-갈륨-아연 산화물 기반 박막 트랜지스터의 NBIS 불안정성 개선을 위한 연구동향

저자 : 윤건주 ( Geonju Yoon ) , 박진수 ( Jinsu Park ) , 김재민 ( Jaemin Kim ) , 조재현 ( Jaehyun Cho ) , 배상우 ( Sangwoo Bae ) , 김진석 ( Jinseok Kim ) , 김현후 ( Hyun-hoo Kim ) , 이준신 ( Junsin Yi )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 32권 5호 발행 연도 : 2019 페이지 : pp. 371-375 (5 pages)

다운로드

(기관인증 필요)

초록보기

Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a SiO2/Si3N4 dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.

KCI등재

5PRAM용 Cu-도핑된 Ge8Sb2Te11 박막의 특성

저자 : 김영미 ( Yeong-mi Kim ) , 공헌 ( Heon Kong ) , 김병철 ( Byung-cheul Kim ) , 이현용 ( Hyun-yong Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 32권 5호 발행 연도 : 2019 페이지 : pp. 376-381 (6 pages)

다운로드

(기관인증 필요)

초록보기

In this work, we evaluated the structural, electrical and optical properties of Ge8Sb2Te11 and Cu-doped Ge8Sb2Te11 thin films prepared by rf-magnetron reactive sputtering. The 200-nm-thick deposited films were annealed in a range of 100~400℃ using a furnace in an N2 atmosphere. The amorphous-to-crystalline phase changes of the thin films were investigated by X-ray diffraction (XRD), UV-Vis-IR spectrophotometry, a 4-point probe, and a source meter. A one-step phase transformation from amorphous to face-centered-cubic (fcc) and an increase of the crystallization temperature (Tc) was observed in the Cu-doped film, which indicates an enhanced thermal stability in the amorphous state. The difference in the optical energy band gap (Eop) between the amorphous and crystalline phases was relatively large, approximately 0.38~0.41 eV, which is beneficial for reducing the noise in the memory devices. The sheet resistance(Rs) of the amorphous phase in the Cu-doped film was about 1.5 orders larger than that in undoped film. A large Rs in the amorphous phase will reduce the programming current in the memory device. An increase of threshold voltage (Vth) was seen in the Cu-doped film, which implied a high thermal efficiency. This suggests that the Cu-doped Ge8Sb2Te11 thin film is a good candidate for PRAM.

KCI등재

6이온빔 조사된 용액 공정 기반 LaZnO 박막 위 액정 분자의 수평 배향 특성

저자 : 오병윤 ( Byeong-yun Oh )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 32권 5호 발행 연도 : 2019 페이지 : pp. 382-386 (5 pages)

다운로드

(기관인증 필요)

초록보기

The alignment characteristics of liquid crystal (LC) molecules on a solution-derived lanthanum zinc oxide (LZO) film under ion-beam irradiation were demonstrated. Using the solution process, an LZO film was fabricated on the glass substrate and cured at 100℃. Afterwards, ion-beam irradiation was performed following the LC alignment method. Using this film, an LC cell was fabricated and the characteristics of the LC alignment were verified. Cross polarizing microscopy and the crystal rotation method were used to investigate the alignment state of the LC molecules on the LZO films. Furthermore, field emission scanning electron microscopy and X-ray photoelectron spectroscopy were used to explore the effect of the ion-beam irradiation on the LZO film. Through these, it was confirmed that the ion-beam irradiation induced surface modification, which demonstrated anisotropic physical and chemical surface characteristics. Due to this, uniform LC alignment was achieved. Finally, the residual DC and anchoring energy of the LC cell based on the LZO films were measured using a capacitance-voltage curve.

KCI등재

7증착 온도에 따른 La2MoO6:Dy3+,Eu3+ 형광체 박막의 광학 특성

저자 : 조신호 ( Shinho Cho )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 32권 5호 발행 연도 : 2019 페이지 : pp. 387-392 (6 pages)

다운로드

(기관인증 필요)

초록보기

Dy3+ and Eu3+-co-doped La2MoO6 phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the La2MoO6 phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of 100℃ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the 5D07F2 and 5D07F4 transitions of the Eu3+ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the 4F9/26H13/2 transition of the Dy3+ ions. The results suggest that La2MoO6 phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

KCI등재

8Poly-TPD/PVK 이중 박막 정공수송층 구조의 양자점발광다이오드

저자 : 김현수 ( Hyun Soo Kim ) , 이도형 ( Do Hyung Lee ) , 김바다 ( Bada Kim ) , 황보람 ( Bo Ram Hwang ) , 김창교 ( Chang Kyo Kim )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 32권 5호 발행 연도 : 2019 페이지 : pp. 393-398 (6 pages)

다운로드

(기관인증 필요)

초록보기

A poly[bis(4-butypheny)-bis(phenyl)benzidine] (poly-TPD) and poly(9-vinylcarbazole) (PVK) bilayer was employed as a hole transport layer (HTL) in solution-processed CdSe/ZnS quantum dot light-emitting diodes (QLEDs). The thickness of the PVK layer spin-coated onto the poly-TPD layer, whose thickness was fixed to 40 nm, was varied, with PVK layer thicknesses of 0 nm, 35 nm, 45 nm, and 55 nm. Because the thickness of the PVK can determine the hole transport properties of the HTL, a PVK thickness that maximizes the performance of the HTL for the QLEDs was investigated. By employing the optimized PVK thickness of 45 nm, the current efficiency of the QLED exhibited a 1.74 times improvement when compared with that of the QLED with poly-TPD based HTL without PVK. This was mainly attributed to the decrease in the energy barrier between the HTL and the quantum dot (QD) emitting layer (EML).

KCI등재

9헤비 페르미온 CePd2Si2의 전자기적 특성

저자 : 정태성 ( Tae Seong Jeong )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 32권 5호 발행 연도 : 2019 페이지 : pp. 399-402 (4 pages)

다운로드

(기관인증 필요)

초록보기

The electromagnetic properties of heavy fermion CePd2Si2 are investigated using density functional theory using the local density approximation (LDA) and LDA+U methods. The Ce f-bands are located near the Fermi energy and hybridized with the Pd-3d states. This hybridization plays an important role in generating the physical characteristics of this compound. The magnetic moment of CePd2Si2 calculated within the LDA scheme does not match with the experimental result because of the strong correlation interaction between the f orbitals. The calculation shows that the specific heat coefficient underestimates the experimental value by a factor of 5.98. This discrepancy is attributed to the formation of quasiparticles. The exchange interaction between the local f electrons and the conduction d electrons is the reason for the formation of quasiparticles. The exchange interaction is significant in CePd2Si2, which makes the quasiparticle mass increase. This enhances the specific heat coefficient.

KCI등재

10션트 저항체의 제작을 위한 Yarned CNT Fiber 저항에 대한 열처리의 영향

저자 : 윤종현 ( Jonghyun Yoon ) , 이선우 ( Sunwoo Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 32권 5호 발행 연도 : 2019 페이지 : pp. 403-406 (4 pages)

다운로드

(기관인증 필요)

초록보기

We prepared yarned carbon nanotube (CNT) fibers from a CNT forest synthesized on a Si wafer by chemical vapor deposition (CVD). The yarned CNT fibers were thermally annealed to reduce their resistance by removing the amorphous carbonaceous impurities present in the fibers. The resistance of the yarned CNT fiber gradually decreased with an increase in the annealing temperature from 200℃ to 400℃ but increased again above 450℃. We carried out thermogravimetric analysis (TGA) to confirm the burning properties of the amorphous carbonaceous impurities and the crystalline CNTs present in the fibers. The pattern of the mass change of the sample CNT fibers was very similar to that of the resistance change. We conclude that CNT fibers should be thermally annealed at temperatures below 400℃ for reducing and stabilizing their resistance.

12
권호별 보기
가장 많이 인용된 논문

(자료제공: 네이버학술정보)

가장 많이 인용된 논문
| | | |
1연안해역에서 석유오염물질의 세균학적 분해에 관한 연구

(2006)홍길동 외 1명심리학41회 피인용

다운로드

2미국의 비트코인 규제

(2006)홍길동심리학41회 피인용

다운로드

가장 많이 참고한 논문

(자료제공: 네이버학술정보)

가장 많이 참고한 논문

다운로드

2미국의 비트코인 규제

(2006)홍길동41회 피인용

다운로드

해당 간행물 관심 구독기관

국회도서관 조선대학교 성균관대학교 청주대학교 충남대학교
 46
 40
 34
 23
 14
  • 1 국회도서관 (46건)
  • 2 조선대학교 (40건)
  • 3 성균관대학교 (34건)
  • 4 청주대학교 (23건)
  • 5 충남대학교 (14건)
  • 6 부산대학교 (12건)
  • 7 경상대학교 (11건)
  • 8 서울대학교 (10건)
  • 9 전북대학교 (8건)
  • 10 고려대학교 (7건)

내가 찾은 최근 검색어

최근 열람 자료

맞춤 논문

보관함

내 보관함
공유한 보관함

1:1문의

닫기