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한국전기전자재료학회> 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) update

Journal of the Korean Institute of Electrical and Electronic Material Engineers

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수록범위 : 1권1호(1988)~33권2호(2020) |수록논문 수 : 4,451
전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
33권2호(2020년 03월) 수록논문
최근 권호 논문
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KCI등재

1P-Emitter의 길이, 구조가 Asymmetric SiC MOSFET 소자 성능에 미치는 영향

저자 : 김동현 ( Dong-hyeon Kim ) , 구상모 ( Sang-mo Koo )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 2호 발행 연도 : 2020 페이지 : pp. 83-87 (5 pages)

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In this letter, we propose and analyze a new asymmetric structure that can be used for next-generation power semiconductor devices. We compare and analyze the electrical characteristics of the proposed device with respect to those of symmetric devices. The proposed device has a p-emitter on the right side of the cell. The peak electric field is reduced by the shielding effect caused by the p-emitter structure. Consequently, the breakdown voltage is increased. The proposed asymmetric structure has an approximately 100% higher Baliga's figure of merit (~94.22 MW/cm2) than the symmetric structure (~46.93 MW/cm2), and the breakdown voltage of the device increases by approximately 70%.

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2Self Heating Effects in Sub-nm Scale FinFETs

저자 : Khushabu Agrawal , Vilas Patil , Geonju Yoon , Jinsu Park , Jaemin Kim , Sangwoo Pae , Jinseok Kim , Eun-chel Cho , Yi Junsin

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 2호 발행 연도 : 2020 페이지 : pp. 88-92 (5 pages)

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Thermal effects in bulk and SOI FinFETs are briefly reviewed herein. Different techniques to measure these thermal effects are studied in detail. Self-heating effects show a strong dependency on geometrical parameters of the device, thereby affecting the reliability and performance of FinFETs. Mobility degradation leads to 7% higher current in bulk FinFETs than in SOI FinFETs. The lower thermal conductivity of SiO2 and higher current densities due to a reduction in device dimensions are the potential reasons behind this degradation. A comparison of both bulk and SOI FinFETs shows that the thermal effects are more dominant in bulk FinFETs as they dissipate more heat because of their lower lattice temperature. However, these thermal effects can be minimized by integrating 2D materials along with high thermal conductive dielectrics into the FinFET device structure.

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3IZO 박막 트랜지스터의 UV를 이용한 후열처리 조사 시간에 따른 전기적 특성 평가

저자 : 이재윤 ( Jae-yun Lee ) , 김한상 ( Han-sang Kim ) , 김성진 ( Sung-jin Kim )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 2호 발행 연도 : 2020 페이지 : pp. 93-98 (6 pages)

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We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and Ion/Ioff ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.

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4W-Band MMIC를 위한 T-형태 게이트 구조를 갖는 MHMET 소자 특성

저자 : 이종민 ( Jong-min Lee ) , 민병규 ( Byoung-gue Min ) , 장성재 ( Sung-jae Chang ) , 장우진 ( Woo-jin Chang ) , 윤형섭 ( Hyung Sup Yoon ) , 정현욱 ( Hyun-wook Jung ) , 김성일 ( Seong-il Kim ) , 강동민 ( Dong Min Kang ) , 김완식 ( Wansik Kim ) , 정주용 ( Jooyong Jung ) , 김종필 ( Jongpil Kim

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 2호 발행 연도 : 2020 페이지 : pp. 99-104 (6 pages)

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In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

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51,200 V급 Trench Si IGBT의 설계 및 전기적인 특성 분석

저자 : 강이구 ( Ey Goo Kang )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 2호 발행 연도 : 2020 페이지 : pp. 105-108 (4 pages)

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In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

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6산업 파워 모듈용 900 V MOSFET 개발

저자 : 정헌석 ( Hunsuk Chung )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 2호 발행 연도 : 2020 페이지 : pp. 109-113 (5 pages)

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A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower RDS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys' process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.

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In this study, we performed the deposition of Al thin film using a DC magnetron sputtering method. To evaluate electrical and structural properties, the growth conditions were changed in terms of two functions, namely, sputtering power ranging from 41.6 to 216 W and film growth rate ranging from 5.35 to 26.39 nm/min. The growth rate and the microstructure were characterized by a scanning electron microscopy and X-ray diffraction analysis. The plane of crystalline growth showed that the preferential (111) direction and defects due to the grain boundary increased with DC power. The resistivity of the Al film over 50 nm showed a constant value by horizontal grain growth. Our results can be applicable for the preparation of nano-templates for anodic aluminum oxide.

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8고효율 페로브스카이트 태양전지에서의 무기 홀 전도체 CuSCN 용매 효과

저자 : 정민수 ( Minsu Jung ) , 석상일 ( Sang Il Seok )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 2호 발행 연도 : 2020 페이지 : pp. 118-122 (5 pages)

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Inorganic-organic hybrid perovskite solar cells have demonstrated a significant achievement by reaching a certified power conversion efficiency of 25.2% in 2019 as compared to that of 3.8% in 2009. However, organic hole conductors such as PTAA and spiro-OMeTAD are known to be expensive and unstable when they are exposed to operational conditions. In this study, the inorganic hole conductor CuSCN was used to overcome such concerns. The influence of dipropyl sulfide (DPS) and diethyl sulfide (DES) as CuSCN deposition solvents on the underlying perovskite active layer was investigated. DES solvent was observed to be advantageous in terms of CuSCN solubility and mild for the perovskite layer, thereby resulting in a power conversion efficiency of 16.9%.

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9대전입자형 디스플레이에서 전자 잉크 주입 방법에 따른 전류 및 광특성 분석

저자 : 안형진 ( Hyeong-jin An ) , 김영조 ( Young-cho Kim )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 2호 발행 연도 : 2020 페이지 : pp. 123-129 (7 pages)

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We analyzed the drift current by charged particles according to the loading methods applied into a closed cell by electronic ink at a reflective-type display panel using an electrophoretic mechanism. For this experiment, various panels were fabricated with injection voltages for electronic ink taking values in the range -4~0 V. The size of each cell was 220 μm × 220 μm and height of the barrier rib was 54.28 μm. The electronic ink was fabricated by mixing electrically neutral fluid and single-charge white particles. Drift current was measured by moving charged particles. A biasing voltage of 6 V was applied to the display panel. As a result, the drift current was proportional to the injection voltage for electronic ink, but it decreased in case of an injection voltage above -3 V. Our experimentation ascertained that the concentration of charged particles injected into closed cells is controlled by the injection voltage and the selective injection of charged particles above movable q/m is possible.

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10커플링/디커플링 네트워크 내장 서지발생장치의 설계 및 제작

저자 : 김남훈 ( Nam-hoon Kim ) , 강태호 ( Tae-ho Kang ) , 신한신 ( Han-sin Shin ) , 길경석 ( Gyung-suk Kil )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 33권 2호 발행 연도 : 2020 페이지 : pp. 130-134 (5 pages)

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Metal oxide varistors (MOVs) protect circuits and devices from transient overvoltages in electric power systems. However, a MOV continuously deteriorates owing to manufacturing defects or repetitive protective operations from transient overvoltages. A deteriorated MOV may result in a short circuit or a line-ground accident. Previous studies focused on the analysis of deterioration mechanisms and condition diagnosis techniques for MOVs owing to their recent growth of use. An accelerated deterioration experiment under the same conditions in which a MOV operates is essential. In this study, we designed and fabricated a surge generator that can apply a surge current to a MOV connected to AC mains. The coupling network operates at a low impedance against the surge current from the surge generator and transfers the surge current to the MOV under test. It also acts as a high impedance against AC mains for the AC voltage not to be applied to the surge generator. The decoupling network operates at a high impedance against the surge current and blocks the surge current from AC mains. It also acts as a low impedance against AC mains for the AC voltage to be applied to the MOV under test. The prototype surge generator can apply the 8/20 us up to 15 kA on AC voltages in the approximate range of 110~450 V, and it fully operates on a LabVIEW-based program.

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1연안해역에서 석유오염물질의 세균학적 분해에 관한 연구

(2006)홍길동 외 1명심리학41회 피인용

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