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한국전기전자재료학회> 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) update

Journal of the Korean Institute of Electrical and Electronic Material Engineers

  • : 한국전기전자재료학회
  • : 공학분야  >  전기공학
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  • : 연속간행물
  • : 월간
  • : 1226-7945
  • : 2288-3258
  • : 전기전자재료학회지(~1997)→전기전자재료학회논문지

수록정보
수록범위 : 1권1호(1988)~31권5호(2018) |수록논문 수 : 4,285
전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)
31권5호(2018년) 수록논문
최근 권호 논문
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KCI등재

1Solution-Processed Al2O3 확산층을 이용한 Sputtering IZO Thin Film Transistor의 안정성 향상

저자 : 황남경 ( Namgyung Hwang ) , 임유성 ( Yooseong Lim ) , 이정석 ( Jeong Seok Lee ) , 이세형 ( S

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 5호 발행 연도 : 2018 페이지 : pp. 273-277 (5 pages)

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This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed Al2O3 diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed Al2O3 diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed Al2O3-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.

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2무접합 원통형 MOSFET에 대한 드레인 유도 장벽 감소의 SPICE 모델

저자 : 정학기 ( Hak Kee Jung )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 5호 발행 연도 : 2018 페이지 : pp. 278-282 (5 pages)

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We propose a SPICE model of drain-induced barrier lowering (DIBL) for a junctionless cylindrical surrounding gate (JLCSG) MOSFETs. To this end, the potential distribution in the channel is obtained via the Poisson equation, and the threshold voltage model is presented for the JLCSG MOSFET. In a JLCSG nano-structured MOSFET, a channel radius affects the carrier transfer as well as the channel length and oxide thickness; therefore, DIBL should be expressed as a function of channel length, channel radius, and oxide thickness. Consequently, it can be seen that DIBLs are proportional to the power of -3 for the channel length, 2 for the channel radius, 1 for the thickness of the oxide film, and the constant of proportionality is 18.5 when the SPICE parameter, the static feedback coefficient η, is between 0.2 and 1.0. In particular, as the channel radius and the oxide film thickness increase, the value of η remains nearly constant.

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3수상태양광 발전 시스템의 환경에 따른 모듈의 전기적 특성

저자 : 황수현 ( Soo Hyun Hwang ) , 이동영 ( Dong Yeong Lee ) , 권오극 ( O Geuk Kwon ) , 이재형 ( Ja

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 5호 발행 연도 : 2018 페이지 : pp. 283-289 (7 pages)

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In our study, we collected data from a 100 kW floating photovoltaic (PV) system installed in Gyeongnam Hapcheon Dam and observed correlations between the power generation of the floating PV system and the irradiance, water temperature, humidity, ambient temperature, wind speed, and module temperature. Firstly, there was little correlation between the water temperature and power generation. Secondly, the ambient temperature, wind speed, and humidity all showed greater correlations with power generation. Finally, the power generation was very highly correlated with the irradiance and module temperature. In conclusion, the power generation of the floating PV system is related individually to environmental factors.

KCI등재

4Shingled 모듈 적용을 위한 태양전지 전극 구조 최적화

저자 : 오원제 ( Won Je Oh ) , 박지수 ( Ji Su Park ) , 황수현 ( Soo Hyun Hwang ) , 이수호 ( Su Ho Le

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 5호 발행 연도 : 2018 페이지 : pp. 290-294 (5 pages)

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The shingled photovoltaic module can be produced by joining divided solar cells into a string of busbarless structure and arranging them in series and parallel to produce a module, in order to produce a high output per unit area. This paper reports a study to optimize solar cell electrode structure for shingled photovoltaic module fabrication. The characteristics of each electrode structure were analyzed according to the simulation program as follow: 80.62% fill factor in the six-junction solar cell electrode structure and 19.23% efficiency in the five-junction electrode structure. Therefore, the split electrode structure optimized for high-density and high-output shingled module fabrication is the five-junction solar cell electrode structure.

KCI등재

5고효율 및 고출력 태양광 모듈을 위한 셀 스트링 연구

저자 : 박지수 ( Ji Su Park ) , 황수현 ( Soo Hyun Hwang ) , 오원제 ( Won Je Oh ) , 이수호 ( Su Ho Le

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 5호 발행 연도 : 2018 페이지 : pp. 295-299 (5 pages)

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In this work, we conducted a study on cell strings of high efficiency and high power solar cell modules via simulation. In contrast to the conventional module manufacturing method, the simulation was performed by connecting cutting cells divided into four parts from 6-in size using the electrically conductive adhesive (ECA). The resistance of the ECA added in series connection was extracted using an experimental method. This resistance was found to be 3 mΩ. Based on this simulation, we verified the change in efficiency of the string as a function of the number of cutting cell connections. Consequently, the cutting cell efficiency of the first 20.08% was significantly increased to 20.63% until the fifth connection; however, for further connections, it was confirmed that the efficiency was saturated to 20.8%. Connecting cutting cells using ECA improves the efficiency of the string; therefore, it is expected that it will be possible to fabricate modules with high efficiency and high power.

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6막대형 Ni-Zn 페라이트 입자의 합성 및 특성 평가

저자 : 전승엽 ( Seung-yeop Chun ) , 황진아 ( Jin-ah Hwang ) , 전명표 ( Myoung-pyo Chun )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 5호 발행 연도 : 2018 페이지 : pp. 300-306 (7 pages)

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The rod-shaped Ni0.5Zn0.5Fe2O4 particles were synthesized via a topotactic reaction, in which goethite (α-FeOOH) particles are the main constituents. The phases, microstructures and magnetic properties of these particles were studied using XRD, FE-SEM and VSM. The precursor solution consisted of NiSO4·xH2O, ZnSO4·xH2O, goethite and D.I. water werereacted at four different temperatures (50, 70, 90, 100℃) to generate four differently precipitated particles respectively. During the co-precipitation reaction, the pH of the solution was maintained at 8.0 using NaOH. The particles coprecipitated and calcined at a temperature of 700℃, exhibited a rod-shape similar to its original goethite, which means that the shape of Ni-Zn ferrite particles can be topotactically controlled by the goethite. The particles synthesized at 70 and 90℃ have a saturation magnetization of 29 and 35 emu/g respectively; representing better values than the ones synthesized at the 50 and 100℃, in which some second phases such as Fe2O3 were observed.

KCI등재

7ZnO-Co3O4-Cr2O3-La2O3 세라믹스의 결함과 입계 특성에 미치는 CaCO3의 영향

저자 : 홍연우 ( Youn-woo Hong ) , 하만진 ( Man-jin Ha ) , 백종후 ( Jong-hoo Paik ) , 조정호 ( Jeong

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 5호 발행 연도 : 2018 페이지 : pp. 307-312 (6 pages)

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Liquid phases in ZnO varistors cause more complex phase development and microstructure, which makes the control of electrical properties and reliability more difficult. Therefore, we have investigated 2 mol% CaCO3 doped ZnO-Co3O4-Cr2O3-La2O3 (ZCCLCa) bulk ceramics as one of the compositions without liquid phase sintering additive. The results were as follows: when CaCO3 is added to ZCCLCa (644 Ωcm) acting as a simple ohmic resistor, CaO does not form a secondary phase with ZnO but is mostly distributed in the grain boundary and has excellent varistor characteristics (high nonlinear coefficient α=78, low leakage current of 0.06 μA/㎠, and high insulation resistance of 1×1011 Ωcm). The main defects Zni·· (AS: 0.16 eV, IS & MS: 0.20 eV) and V˙o (AS: 0.29 eV, IS & MS: 0.37 eV) were found, and the grain boundaries had 1.1 eV with electrically single grain boundary. The resistance of each defect and grain boundary decreases exponentially with increasing the measurement temperature. However, the capacitance (0.2 nF) of the grain boundary was ~1/10 lower than that of the two defects (~3.8 nF, ~2.2 nF) and showed a tendency to decrease as the measurement temperature increased. Therefore, ZCCLCa varistors have high sintering temperature of 1,200℃ due to lack of liquid phase additives, but excellent varistor characteristics are exhibited, which means ZCCLCa is a good candidate for realizing chip type or disc type commercial varistor products with excellent performance.

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8ZnO-Zn2BiVO6-Mn3O4 바리스터의 미세구조와 전기적 특성

저자 : 홍연우 ( Youn-woo Hong ) , 하만진 ( Man-jin Ha ) , 백종후 ( Jong-hoo Paik ) , 조정호 ( Jeong

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 5호 발행 연도 : 2018 페이지 : pp. 313-319 (7 pages)

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This study introduces a new investigation report on the microstructural and electrical property changes of ZnO-Zn2BiVO6-Mn3O4 (ZZMn), where 0.33 mol% of Mn3O4 and 0.5 mol% of Zn2BiVO6 were added to ZnO (99.17 mol%) as liquid phase sintering aids. Zn2BiVO6 contributes to the decrease of sintering temperatures by up to 800℃, and segregates its particles at the grain boundary, while Mn3O4 enhances α, the nonlinear coefficient, of varistor properties up to α=62. In comparison, when the sintering temperature is increased from 800℃ to 1,000℃, the resistivity of ZnO grains decreases from 0.34 Ωcm to 0.16 Ωcm, and the varistor property degrades. Oxygen vacancy (Vo·) (P1, 0.33~0.36 eV) is formed as a dominant defect. Two different kinds of grain boundary activation energies of P2 (0.51~0.70 eV) and P3 (0.70~0.93 eV) are formed according to different sintering temperatures, which are tentatively attributed to be ZnO/Zn2BiVO6-rich interface and ZnO/ZnO interface, respectively. Accordingly, this study introduces a progressive method of manufacturing ZnO chip varistors by way of sintering ZZMn-based varistor under 900℃. However, to procure a higher reliability, an in-depth study on the multi-component varistors with double-layer grain boundaries should be executed.

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9원격 플라즈마 화학기상 증착법으로 성장된 미세 결정화된 SiGe 박막 형성

저자 : 김도영 ( Doyoung Kim )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 31권 5호 발행 연도 : 2018 페이지 : pp. 320-323 (4 pages)

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SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at 400℃ using SiH4 or SiCl4 and GeCl4 as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using SiCl4 and SiH4 source were comparatively studied. SiGe films deposited using SiCl4 source showed a lower growth rate and higher crystallinity than those deposited using SiH4 source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

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Red phosphor in glasses (PiGs) for automotive light-emitting diode (LED) applications were fabricated with 620-nm CaAlSiN3:Eu2+ phosphor and Pb-free silicate glass. PiGs were synthesized and mounted on high-power blue LED to make a monochromatic red LED. PiGs were simple mixtures of red phosphor and transparent glass powder. After being fabricated with uniaxial press and CIP at 300 MPa for 20 min, the green bodies were thermally treated at 550℃ for 30 min to produce high dense PiGs. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30% phosphor had a full sintered density. Changes in photoluminescence spectra and color coordination were studied by varying the thickness of plates that were mounted after optical polishing. As a result of the optical spectrum and color coordinates, PiG plate with 210 μm thickness showed a color purity of 99.7%. In order to evaluate the thermal stability, the thermal quenching characteristics were measured at temperatures of 30~150℃. The results showed that the red PIG plates were 30% more thermally stable compared to the AlGaInP red chip.

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